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The CMP process is also used to control film thickness and removal of barrier layers.

CMP技术也用于控制薄膜厚度及剥离隔离层.

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Mathematical models were developed to simulate particle reduction in CMP slurry distribution systems.

为模拟cmp磨料 分配系统的粒子减少开发了数字模型.

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Recent investigation shows that CeC & gt ; 2 nanoparticles can be used as CMP slurry to polish IC chip.

最新研究表明,纳米 CeO _2可用于集成电路芯片加工的化学机械抛光(CMP)浆料.

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Then its CMP properties on hard disk substrate with nickel - phosphorous plated was studied.

进而研究了其在镍磷敷镀的硬盘基片CMP中 的抛光特性.

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The presented parallel algorithms can be referred in designing CMP system and optimizing other applications.

这些算法的提出,为今后CMP系统的设计以及其他应用在CMP体系结构上的并行优化提供了参考.

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Under the optimal conditions, about 45.7 % CMP was transformed to CTP.

在最优化条件下, 转化率达45.7%.

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After the 2.2.15 cell line was planted 24 hours, CMP and Alcilovir ( ACV ) were added.

将2.2.15细胞株种板24h后, 分别加入羧甲基茯苓多糖和阳性对照药阿昔洛韦 ( ACV ) .

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The major problem in Cu CMP is dishing, serious dishing will cause the yield loss.

铜化学机械抛光是近些年发展最快的一种工艺,铜碟形是铜化学机械抛光工艺中的主要问题之一.

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The rates of sensitivity to aminopenicillin ( AMP ) , chloramphenicol ( CMP ) , kanamycin ( KM ) , complex sulfamethoxazole - trimethoprim ( COS ) , gentamicin ( GN ) , neomycin ( NM ), tobramycin ( TOB ) , amikacin ( AKN ) and norfloxacin ( NOR ) were high, between 84.4 % and 95.5 %.

对链霉素、痢特灵 、 羧 苄青霉素及 四环素 的耐药率较高, 在129%～457%之间, 对红霉素的耐药率高达949%.

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The Chemical mechanical polishing technique in the field of semiconductor industry was introduced.

介绍了半导体工业中蓬勃发展的化学机械抛光(CMP)技术.

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