The PVS spectra for GaAs 、 InP 、 InGaAs 、 InGaAsP etc. are reported in this paper.

本文介绍了InP、InGaAs、InGaP、InGaAsP等 的光压港(PVS).

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Finally, discussed are etching mechanism, polishing principles, and control of reactive versions of the InP material.

文章最后讨论了InP材料的腐蚀机理 、 抛光原理及化学反应类型的控制.

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INP Grenoble Institut National Polytechnique de Grenoble.

国立园艺与风景规划学校.

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The resultsdemonstrat that three electron trape ( E _ c - 0.17 eV , E _ c - 0.23 eV, E _ c - 0.39 eV ) produced inp ￣ + nn ￣ + structures are characterized by deep level transient spectroscopy.

还可引入三个缺陷能级:氧空位E_ 1(E_ c - 0.17ev) 、 双空位E_2 ( E_ c-0.23eV ) 和E_3(E_c-0.39eV).

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The microstructures of INP latex films were characterized by IR and transmission electron microscopy ( TEM ).

以红外光谱、透射 电子显微镜 表征互穿共聚物乳胶膜的微观结构.

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In SiO 2 nanocables were discovered accidentally as we researched in InP nanowires growth.

二氧化矽包覆铟之一维奈米结构的发现,是在成长磷化铟奈米线之偶然情况下被合成出来的.

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