It means that the spectrum will decrease with the drain - source voltage.

这意味着干扰频谱幅值随漏源极电压的降低而降低.

互联网

These drain - source voltage waveforms can be theoretically distinguished into typical elements.

这些漏源极电压波形能用典型的理论来描述.

互联网

The hard switching approach ( as shown in Fig. 26 ) doesn't consider the minimum drain - source voltage.

硬开关 ( 图26所示 ) 几乎不考虑漏源极电压的最小值.

互联网

P - channel lateral MOSFET. High power 125 W. Drain - source voltage 250 V. Storage temperature range.

P沟道MOSFET的 外侧. 高功率125瓦特的漏源电压250V.储存温度范围.

互联网

The superposition of all these elements results in a typical drain - source voltage shown in Fig. 16.

把这些原理按时序整合呈现出图16所示的典型漏源极电压.

互联网

This can be explained by two major differences of the 800 V drain - source voltage waveform.

这里有两条理由可以解释800伏特漏源极电压波形的两个差异.

互联网

The spectrum of the whole drain - source waveform ( Fig . 16 ) is presented in Fig . 18.

图16所示的漏源 极电压 呈现的电磁干扰频谱见图18.

互联网