Recently, several vendors have started to offer fully integrated, isolated, gate - drive solutions.

最近, 部分厂家开始提供全集成隔离栅极驱动解决方案.

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It has insulated gate MOS devices and the ability to quickly switch.

它具有MOS器件 栅极绝缘和快速开关的能力.

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Well, what if the plate also followed the grid?

然后, 如果屏级同样跟随栅极又会 怎么样 呢?

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A new type power MOSFET lower on - resistance and gate charge.

新型功率MOSFET——QFET带有低通态电阻和栅极电荷.

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The floating gate is positioned between the source and drain regions.

浮动栅极定位于源极区与漏极区之间.

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Ones the PFC starts running the IGBT ( Q 2 ) gate supply becomes active.

当PFC开始运行时,IGBT ( Q2 ) 栅极电源变得激活.

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The grid electrode is configured on the base - plate.

栅极配置于基板上.

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Diode D 2 serves as a gate protection diode.

二极管D2用作栅极保护二极管.

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Grid voltage is about threshold voltage, which is dependent on design of IC circuit device.

另外,栅极电压约为阈值电压, 它依赖于集成电路装置设计.

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So the novelty carbon nanotube field emission display with new grid - controlled structure is successfully fabricated.

在此基础上,首次成功的制作了新型 控制栅极 结构、碳纳米管阴极场致发射显示屏.

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The grid insulation layer is arranged on the base - plate and covers the grid electrode.

栅绝缘层配置于基板上以覆盖栅极.

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The critical portion of the metal gate could also be the TIL itself.

金属栅极的关键部分还有TIL本身.

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And the analysis is made on gate characteristics and switching process of IGBT.

介绍了全桥逆变电路的工作方式,探讨了IGBT的 栅极特性及动态开关过程.

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Strange new materials appear for the first time in the gate stack of Intel's 45 - nm transistors .

新奇的材料首次出现在 intel45nm 晶体管的栅极堆叠之中.

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For the problem the negative gate drive adopted , but thethe general negative charge pump circuit.

因此设计了一种简化负压栅极驱动电路, 电路简单,工作可靠.

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