The method, mutation mechanism and characteristics of ion implantation were introduced.

简要介绍了离子注入的方法 、 作用机理及特点.

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At last we the possible enhancement mechanism of polymer optical nonlinearity.

最后,讨论了离子注入增强聚合物非线性光学性能的可能机理.

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Ion implantation changed mechanical and magnetic properties of polymer film too.

离子注入聚合物还引起聚合物力学、磁学性质发生变化.

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The corrosion behavior of Pd + - implanted iron substrates was investigated.

研究了 铁基 体离子注入钯后的腐蚀行为.

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The influence of ion implantation on the superconductivities of Yttrium - based and Bi - based superconductors is described.

描述了离子注入对钇系和铋系超导体超导电性的影响.

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In vitro material is always difficult to survive because of freeze injury during ion beam implantation.

离子注入过程中活体材料往往由于真空造成的冻害而不能存活.

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The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported.

本文简要叙述用离子注入法制造双极硅ECL集成电路 的实验结果.

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Mobility spectrum analysis method will be a useful approach in ion implanted samples � � non - destructive analysis.

迁移率谱是离子注入样品的有效的 非 破坏分析方法之一.

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The mechanism of raising wear resistance by N + ion implantation is also discussed.

对N+离子注入活塞环提高耐磨性的机理亦作了探讨.

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The data shows source and drain IMP process has much effect to the STI isolation.

实验结果表明:阱和源漏极离子注入制程对浅沟道隔离性能有很大的影响.

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Accoding to the structure analysis, the conducting carriers of the ion - implanted PET are mainly ions.

根据薄膜结构分析初步确认离子注入PET薄膜主要是离子导电.

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In 1995, Li qi long's group introduced it to analytical chemistry and prepared ion implanted electrodes.

1995年李启隆研究组将其引入分析化学领域,研制了离子注入修饰电极.

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This paper summarises the principle, characters, application and trend of development of Plasma Immersion Ion Implantation.

本文扼要地介绍了等离子体湮没离子注入的基本原理 、 特点 、 应用效果及发展趋向.

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An ultra low insertion loss GaAs MMIC RF SPDT switch based on full - ion - implantation technology is reported.

报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关.

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The phosphorus - doped diamond - like carbon ( DLC ) films were fabricated by plasma immersion ion implantation and deposition ( P - D ) .

应用等离子体浸没离子注入与沉积方法合成了磷掺杂的类金刚石 ( diamondlikecarbon,DLC ) 薄膜.

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