Modeling low - pressure, high - density plasma etching is highly significant for high - density plasma etching processing research.

低气压 、 高密度等离子体刻蚀的模拟对于高密度等离子体刻蚀的工艺研究具有重要意义.

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Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf - bias power.

因此, 等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善.

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